Abstract
Both from a scalability and integration perspective, CMOS-based qubits hold great potential for quantum computing applications. However, current fabrication processes must be adapted to fit qubit requirements, implying a need for controlled process m onitoring to compare technological splits as well as toguarantee future process quality. The switch to isotopically enriched 28Si as a channel material is one such adaptation that requires deeper study. Here, we fabricate identical devices with 28Si and natural Si and present a comparison of their variable temperature transport characteristics using the Hall effect and split C-V. Once validated, we use the same 300mm process flow to fabricate 28Si quantum dots which, despite the addition of a second gate level, display state-of-the-art charge noise at 400mK.
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