Abstract
Si-based qubits are considered the most promising experimental system for scaling quantum computing. For the first time, FDSOI CMOS technology is demonstrated as the platform to co-integrate hole and electron spin qubits with cryo-electronics. For cryo-control, we show voltage gain as high as 75dB for long devices, noise of 10-11V2∙μm2/Hz and 1.29mV∙μm threshold voltage variability. We propose a standard cell for two-qubit gates on commercial 22FDX® and show double quantum dot features. Finally, we demonstrate hole and electron qubits on the same FDSOI technology with a manipulation speed of 1μs and coherence time of 40μs (Hahn echo), respectively.
IEDM 2024Author(s)
